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1

Deep levels and a possible d-x-like center in molecular beam epitaxial inxal1−xas

W-P. Hong, S. Dhar, P. K. Bhattacharya, A. Chin

Journal:

Journal of Electronic Materials

Année:

1987

Langue:

english

Fichier:

PDF, 323 KB

english, 1987

2

Co, Fe, and Ti Implants in InGaAs and Co Implants in InP at 200° C

Mulpuri V. Rao, Sadanand M. Gulwadi, Savitri Mulpuri, David S. Simons, Peter H. Chi, C. Caneau, W-P. Hong, O. W. Holland, Harry B. Dietrich

Journal:

Journal of Electronic Materials

Année:

1992

Langue:

english

Fichier:

PDF, 581 KB

english, 1992

3

[IEEE 51st Annual Device Research Conference - Santa Barbara, CA (June 21-23, 1993)] 51st Annual Device Research Conference - OMCVD grown AlInAs/GaInAs HEMT's with AlGaInP schottky layer

Chough, K.B., Hong, W-P., Caneau, C., Song, J.-I., Hayes, J.R.

Année:

1993

Langue:

english

Fichier:

PDF, 135 KB

english, 1993

4

[IEEE [1991] 49th Annual Device Research Conference Digest - Boulder, CO (June 17-19, 1991)] [1991] 49th Annual Device Research Conference Digest - Characteristics of Inaias/ingaasp Quantum-Well Hemts

Hong, W-P., Bhat, R., Hayes, J.R., Chang, G.K., Nguyen, C., Koza, M.

Année:

1991

Fichier:

PDF, 109 KB

1991

5

InP/GaAsSb/InP and InP/GaAsSb/InGaAsP double heterojunction bipolar transistors with a carbon-doped base grown by organometallic chemical vapor deposition

Bhat, R., Hong, W-P., Caneau, C., Koza, M. A., Nguyen, C-K., Goswami, S.

Journal:

Applied Physics Letters

Année:

1996

Langue:

english

Fichier:

PDF, 381 KB

english, 1996

6

Effects of in situ treatment on InGaAs/InP heterointerfaces produced by organometallic chemical vapor deposition regrowth

Hong, W-P., Caneau, C., Hayes, J. R., Bhat, R., Chang, G. K., Nguyen, C., Jeong, Y. H., Hadjipanteli, S., Illiadis, A. A.

Journal:

Journal of Applied Physics

Année:

1991

Langue:

english

Fichier:

PDF, 535 KB

english, 1991

7

Summary Abstract: Material properties and clustering in molecular-beam epitaxial In0.52Al0.48As and In1−x−yGaxAlyAs

Journal:

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures

Année:

1987

Langue:

english

Fichier:

PDF, 412 KB

english, 1987

8

Transport properties of two-dimensional electron gas systems in delta-doped Si:In0.53Ga0.47As grown by organometallic chemical vapor deposition

Hong, W-P., DeRosa, F., Bhat, R., Allen, S. J., Hayes, J. R.

Journal:

Applied Physics Letters

Année:

1989

Langue:

english

Fichier:

PDF, 456 KB

english, 1989

9

Pseudomorphic InGaAs base ballistic hot-electron device

Seo, K., Heiblum, M., Knoedler, C. M., Hong, W-P., Bhattacharya, P.

Journal:

Applied Physics Letters

Année:

1988

Langue:

english

Fichier:

PDF, 540 KB

english, 1988

10

In-Situ Tensile Observation of Deformation Twin in TWIP Steel Using TEM

Baik, S-I, Ahn, T-Y, Hong, W-P, Jung, Y-S, Lee, Y-K, Kim, Y-W

Journal:

Microscopy and Microanalysis

Année:

2009

Langue:

english

Fichier:

PDF, 510 KB

english, 2009

11

SPIE Proceedings [SPIE 1987 Symposium on the Technologies for Optoelectronics - Cannes, France (Tuesday 17 November 1987)] Quantum Wells and Superlattices in Optoelectronic Devices and Integrated Optics - The Engineering Of Optical Absorption Coefficients In Strained Multiquantum Well Systems

Kothiyal, G. P., Hong, S-C., Hong, W-P., Singh, Jasprit, Bhattacharya, P., Adams, Alfred R.

Année:

1988

Langue:

english

Fichier:

PDF, 211 KB

english, 1988